1、【更新】移植说明文档及部分配置注释说明。

Signed-off-by: armink <armink.ztl@gmail.com>
9 years ago · a16ea0a1be
parent 387933dcc1
commit a16ea0a1be
5 changed files with 27 additions and 30 deletions
--- a/demo/env/stm32f10x/non_os/components/easyflash/inc/ef_cfg.h
+++ b/demo/env/stm32f10x/non_os/components/easyflash/inc/ef_cfg.h
@ -75,14 +75,13 @@
 *       1.Normal mode: no more limitations
 *       2.Wear leveling mode: system section will used an flash section and the data section will used at least 2 flash sections
 *       3.Power fail safeguard mode: ENV area will has an backup. It is twice as normal mode.
- *       4.wear leveling and power fail safeguard mode: The system section will used an flash section.
- *         The data section is twice as wear leveling mode data section size.
+ *       4.wear leveling and power fail safeguard mode: The required capacity will be 2 times the total capacity in wear leveling mode.
 *       For example:
 *       The EF_ERASE_MIN_SIZE is 128K and the ENV_USER_SETTING_SIZE: 2K. The ENV_AREA_SIZE in different mode you can define
 *       1.Normal mode: 1*EF_ERASE_MIN_SIZE
- *       2.Wear leveling mode: 2*EF_ERASE_MIN_SIZE (It has 2 flash section to store ENV. So ENV can erase at least 200,000 times)
+ *       2.Wear leveling mode: 3*EF_ERASE_MIN_SIZE (It has 2 data section to store ENV. So ENV can erase at least 200,000 times)
 *       3.Power fail safeguard mode: 2*EF_ERASE_MIN_SIZE
- *       4.Wear leveling and power fail safeguard mode: 5*EF_ERASE_MIN_SIZE
+ *       4.Wear leveling and power fail safeguard mode: 6*EF_ERASE_MIN_SIZE
 * @note the log area size must be more than twice of EF_ERASE_MIN_SIZE
 */
 /* backup area start address */
@ -95,7 +94,7 @@
        #define ENV_AREA_SIZE          (1 * EF_ERASE_MIN_SIZE)      /* 2K */
    #else
        /* ENV area total bytes size in wear leveling mode. */
-        #define ENV_AREA_SIZE          (4 * EF_ERASE_MIN_SIZE)      /* 8K */
+        #define ENV_AREA_SIZE          (3 * EF_ERASE_MIN_SIZE)      /* 6K */
    #endif
 #else
    #ifndef EF_ENV_USING_WL_MODE
@ -103,7 +102,7 @@
        #define ENV_AREA_SIZE          (2 * EF_ERASE_MIN_SIZE)      /* 4K */
    #else
        /* ENV area total bytes size in wear leveling and power fail safeguard mode. */
-        #define ENV_AREA_SIZE          (5 * EF_ERASE_MIN_SIZE)      /* 10K */
+        #define ENV_AREA_SIZE          (6 * EF_ERASE_MIN_SIZE)      /* 12K */
    #endif
 #endif
 /* saved log area size */
--- a/demo/env/stm32f10x/non_os_spi_flash/components/easyflash/inc/ef_cfg.h
+++ b/demo/env/stm32f10x/non_os_spi_flash/components/easyflash/inc/ef_cfg.h
@ -66,14 +66,13 @@
 *       1.Normal mode: no more limitations
 *       2.Wear leveling mode: system section will used an flash section and the data section will used at least 2 flash sections
 *       3.Power fail safeguard mode: ENV area will has an backup. It is twice as normal mode.
- *       4.wear leveling and power fail safeguard mode: The system section will used an flash section.
- *         The data section is twice as wear leveling mode data section size.
+ *       4.wear leveling and power fail safeguard mode: The required capacity will be 2 times the total capacity in wear leveling mode.
 *       For example:
 *       The EF_ERASE_MIN_SIZE is 128K and the ENV_USER_SETTING_SIZE: 2K. The ENV_AREA_SIZE in different mode you can define
 *       1.Normal mode: 1*EF_ERASE_MIN_SIZE
- *       2.Wear leveling mode: 2*EF_ERASE_MIN_SIZE (It has 2 flash section to store ENV. So ENV can erase at least 200,000 times)
+ *       2.Wear leveling mode: 3*EF_ERASE_MIN_SIZE (It has 2 data section to store ENV. So ENV can erase at least 200,000 times)
 *       3.Power fail safeguard mode: 2*EF_ERASE_MIN_SIZE
- *       4.Wear leveling and power fail safeguard mode: 5*EF_ERASE_MIN_SIZE
+ *       4.Wear leveling and power fail safeguard mode: 6*EF_ERASE_MIN_SIZE
 * @note the log area size must be more than twice of EF_ERASE_MIN_SIZE
 */
 /* backup area start address */
@ -86,7 +85,7 @@
        #define ENV_AREA_SIZE          (1 * EF_ERASE_MIN_SIZE)      /* 4K */
    #else
        /* ENV area total bytes size in wear leveling mode. */
-        #define ENV_AREA_SIZE          (4 * EF_ERASE_MIN_SIZE)      /* 16K */
+        #define ENV_AREA_SIZE          (3 * EF_ERASE_MIN_SIZE)      /* 16K */
    #endif
 #else
    #ifndef EF_ENV_USING_WL_MODE
@ -94,7 +93,7 @@
        #define ENV_AREA_SIZE          (2 * EF_ERASE_MIN_SIZE)      /* 8K */
    #else
        /* ENV area total bytes size in wear leveling and power fail safeguard mode. */
-        #define ENV_AREA_SIZE          (5 * EF_ERASE_MIN_SIZE)      /* 20K */
+        #define ENV_AREA_SIZE          (6 * EF_ERASE_MIN_SIZE)      /* 20K */
    #endif
 #endif
 /* saved log area size */
--- a/demo/env/stm32f10x/rtt/components/easyflash/inc/ef_cfg.h
+++ b/demo/env/stm32f10x/rtt/components/easyflash/inc/ef_cfg.h
@ -75,14 +75,13 @@
 *       1.Normal mode: no more limitations
 *       2.Wear leveling mode: system section will used an flash section and the data section will used at least 2 flash sections
 *       3.Power fail safeguard mode: ENV area will has an backup. It is twice as normal mode.
- *       4.wear leveling and power fail safeguard mode: The system section will used an flash section.
- *         The data section is twice as wear leveling mode data section size.
+ *       4.wear leveling and power fail safeguard mode: The required capacity will be 2 times the total capacity in wear leveling mode.
 *       For example:
 *       The EF_ERASE_MIN_SIZE is 128K and the ENV_USER_SETTING_SIZE: 2K. The ENV_AREA_SIZE in different mode you can define
 *       1.Normal mode: 1*EF_ERASE_MIN_SIZE
- *       2.Wear leveling mode: 2*EF_ERASE_MIN_SIZE (It has 2 flash section to store ENV. So ENV can erase at least 200,000 times)
+ *       2.Wear leveling mode: 6*EF_ERASE_MIN_SIZE (It has 2 data section to store ENV. So ENV can erase at least 200,000 times)
 *       3.Power fail safeguard mode: 2*EF_ERASE_MIN_SIZE
- *       4.Wear leveling and power fail safeguard mode: 5*EF_ERASE_MIN_SIZE
+ *       4.Wear leveling and power fail safeguard mode: 6*EF_ERASE_MIN_SIZE
 * @note the log area size must be more than twice of EF_ERASE_MIN_SIZE
 */
 /* backup area start address */
@ -95,7 +94,7 @@
        #define ENV_AREA_SIZE          (1 * EF_ERASE_MIN_SIZE)      /* 2K */
    #else
        /* ENV area total bytes size in wear leveling mode. */
-        #define ENV_AREA_SIZE          (4 * EF_ERASE_MIN_SIZE)      /* 8K */
+        #define ENV_AREA_SIZE          (3 * EF_ERASE_MIN_SIZE)      /* 6K */
    #endif
 #else
    #ifndef EF_ENV_USING_WL_MODE
@ -103,7 +102,7 @@
        #define ENV_AREA_SIZE          (2 * EF_ERASE_MIN_SIZE)      /* 4K */
    #else
        /* ENV area total bytes size in wear leveling and power fail safeguard mode. */
-        #define ENV_AREA_SIZE          (5 * EF_ERASE_MIN_SIZE)      /* 10K */
+        #define ENV_AREA_SIZE          (6 * EF_ERASE_MIN_SIZE)      /* 12K */
    #endif
 #endif
 /* saved log area size */
--- a/demo/env/stm32f4xx/components/easyflash/inc/ef_cfg.h
+++ b/demo/env/stm32f4xx/components/easyflash/inc/ef_cfg.h
@ -68,14 +68,13 @@
 *       1.Normal mode: no more limitations
 *       2.Wear leveling mode: system section will used an flash section and the data section will used at least 2 flash sections
 *       3.Power fail safeguard mode: ENV area will has an backup. It is twice as normal mode.
- *       4.wear leveling and power fail safeguard mode: The system section will used an flash section.
- *         The data section is twice as wear leveling mode data section size.
+ *       4.wear leveling and power fail safeguard mode: The required capacity will be 2 times the total capacity in wear leveling mode.
 *       For example:
 *       The EF_ERASE_MIN_SIZE is 128K and the ENV_USER_SETTING_SIZE: 2K. The ENV_AREA_SIZE in different mode you can define
 *       1.Normal mode: 1*EF_ERASE_MIN_SIZE
- *       2.Wear leveling mode: 2*EF_ERASE_MIN_SIZE (It has 2 flash section to store ENV. So ENV can erase at least 200,000 times)
+ *       2.Wear leveling mode: 3*EF_ERASE_MIN_SIZE (It has 2 data section to store ENV. So ENV can erase at least 200,000 times)
 *       3.Power fail safeguard mode: 2*EF_ERASE_MIN_SIZE
- *       4.Wear leveling and power fail safeguard mode: 5*EF_ERASE_MIN_SIZE
+ *       4.Wear leveling and power fail safeguard mode: 6*EF_ERASE_MIN_SIZE
 * @note the log area size must be more than twice of EF_ERASE_MIN_SIZE
 */
 /* backup area start address */
@ -88,7 +87,7 @@
        #define ENV_AREA_SIZE          (1 * EF_ERASE_MIN_SIZE)      /* 128K */
    #else
        /* ENV area total bytes size in wear leveling mode. */
-        #define ENV_AREA_SIZE          (4 * EF_ERASE_MIN_SIZE)      /* 512K */
+        #define ENV_AREA_SIZE          (3 * EF_ERASE_MIN_SIZE)      /* 384K */
    #endif
 #else
    #ifndef EF_ENV_USING_WL_MODE
@ -96,7 +95,7 @@
        #define ENV_AREA_SIZE          (2 * EF_ERASE_MIN_SIZE)      /* 256K */
    #else
        /* ENV area total bytes size in wear leveling and power fail safeguard mode. */
-        #define ENV_AREA_SIZE          (5 * EF_ERASE_MIN_SIZE)      /* 640K */
+        #define ENV_AREA_SIZE          (6 * EF_ERASE_MIN_SIZE)      /* 768K */
    #endif
 #endif
 /* saved log area size */
--- a/docs/zh/port.md
+++ b/docs/zh/port.md
@ -25,9 +25,10 @@
 |\easyflash\src\ef_utils.c              |EasyFlash常用小工具，例如：CRC32|
 |\easyflash\src\easyflash.c             |目前只包含EasyFlash初始化方法|
 |\easyflash\port\ef_port.c              |不同平台下的EasyFlash移植接口|
-|\demo\env\stm32f10x\non_os             |stm32f10x裸机的Env demo|
-|\demo\env\stm32f10x\rtt                |stm32f10x基于[RT-Thread](http://www.rt-thread.org/)的Env demo|
-|\demo\env\stm32f4xx                    |stm32f4xx基于[RT-Thread](http://www.rt-thread.org/)的Env demo|
+|\demo\env\stm32f10x\non_os             |stm32f10x裸机片内Flash的Env demo|
+|\demo\env\stm32f10x\non_os_spi_flash   |stm32f10x裸机SPI Flash的Env demo|
+|\demo\env\stm32f10x\rtt                |stm32f10x基于[RT-Thread](http://www.rt-thread.org/)的片内Flash Env demo|
+|\demo\env\stm32f4xx                    |stm32f4xx基于[RT-Thread](http://www.rt-thread.org/)的片内Flash Env demo|
 |\demo\iap\ymodem+rtt.c                 |使用[RT-Thread](http://www.rt-thread.org/)+[Ymodem](https://github.com/RT-Thread/rt-thread/tree/master/components/utilities/ymodem)的IAP Demo|
 |\demo\log\easylogger.c                 |基于[EasyLogger](https://github.com/armink/EasyLogger)的Log Demo|

@ -204,12 +205,12 @@ void ef_print(const char *format, ...)
 - 1、常规模式：没有差异；
 - 2、擦写平衡模式：系统区将会占用1个`EF_ERASE_MIN_SIZE`大小，数据区至少等使用2个以上Flash扇区；
 - 3、掉电保护模式：环境变量区将会被备份，所以总容量是常规模式的2倍；
- - 4、擦写平衡+掉电保护模式：系统区将会占用1个`EF_ERASE_MIN_SIZE`大小，数据区将会是擦写平衡模式下的数据区总容量的2倍。
+ - 4、擦写平衡+掉电保护模式：所需容量将会是擦写平衡模式下总容量的2倍。
 - 例如：`EF_ERASE_MIN_SIZE`是128K，`ENV_USER_SETTING_SIZE`是2K，那么你可以这样定义不同模式下的环境变量总容量：
 - 1、常规模式：`1*EF_ERASE_MIN_SIZE`；
- - 2、擦写平衡模式：`3*EF_ERASE_MIN_SIZE`（它将会有3个Flash扇区去存储环境变量，按照每个Flash扇区可被擦写10W次计算，那么当前配置至少可擦写30W次）;
+ - 2、擦写平衡模式：`3*EF_ERASE_MIN_SIZE`（它将会有3个Flash扇区去存储环境变量，1个系统区，2个数据区，按照每个Flash扇区可被擦写10W次计算，那么当前配置至少可擦写20W次）;
 - 3、掉电保护模式：`2*EF_ERASE_MIN_SIZE`;
- - 4、擦写平衡+掉电保护模式：`5*EF_ERASE_MIN_SIZE`;
+ - 4、擦写平衡+掉电保护模式：`6*EF_ERASE_MIN_SIZE`;

 #### 5.5.1 备份区起始地址