[优化]优化启动时读写速度

easyflash/inc/ef_cfg.h

@@ -59,6 +59,9 @@
  * only support 1(nor flash)/ 8(stm32f4)/ 32(stm32f1) */
 #define EF_WRITE_GRAN             /* @note you must define it for a value */
 
+
+/* The size of read_env and continue_ff_addr function used*/
+#define EF_READ_BUF_SIZE             32     /* @default 32, Larger numbers can improve first-time speed of alloc_env but require more stack space*/
 /*
  *
  * This all Backup Area Flash storage index. All used flash area configure is under here.

easyflash/src/ef_env.c

@@ -424,7 +424,7 @@ static bool get_env_from_cache(const char *name, size_t name_len, uint32_t *addr
  */
 static uint32_t continue_ff_addr(uint32_t start, uint32_t end)
 {
-    uint8_t buf[32], last_data = 0x00;
+    uint8_t buf[EF_READ_BUF_SIZE], last_data = 0x00;
     size_t i, addr = start, read_size;
 
     for (; start < end; start += sizeof(buf)) {
@@ -522,7 +522,7 @@ static uint32_t get_next_env_addr(sector_meta_data_t sector, env_node_obj_t pre_
 static EfErrCode read_env(env_node_obj_t env)
 {
     struct env_hdr_data env_hdr;
-    uint8_t buf[32];
+    uint8_t buf[EF_READ_BUF_SIZE];
     uint32_t calc_crc32 = 0, crc_data_len, env_name_addr;
     EfErrCode result = EF_NO_ERR;
     size_t len, size;